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isc Silicon PNP Power Transistor
ESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
BD132 Datasheet
