Inchange Semiconductor BD132
PNP Transistor
BD132 Specifications
- Package : TO-126-3
- Polarity : PNP
Source:
Octopart
| Part No. | BD132 |
|---|---|
| Datasheet | BD132 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
●Designed for medium power and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6 ℃/W BD132 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Cur...