BD132 Overview
isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) ·plement to type BD131 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications.

