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Inchange Semiconductor
BD139
DESCRIPTION - DC Current Gain- : h FE= 40(Min)@ IC= 0.15A - Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) - plement to type BD140 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as audio amplifiers and drivers utilizing plementary or quasi plementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 1.25 W ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD139 isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc...