BD136
Description
DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) plement to type BD135 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BD136
- Description: PNP Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 204.43 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| BD138 | Unisonic Technologies | PNP SILICON TRANSISTOR |
| BD13003B | SeCoS Halbleitertechnologie GmbH | NPN Plastic Encapsulated Transistor |
| BD1321G | ROHM | Ground Sense Low Power General Purpose Operational Amplifiers |
| BD135 | Unisonic Technologies | NPN Transistor |
| BD137-16 | onsemi | NPN Epitaxial Silicon Transistor |
| BD130 | Solitron Devices | NPN Silicon Power |
| BD139A | Unisonic Technologies | NPN POWER TRANSISTORS |
| BD139 | Multicomp | TO-126 NPN Transistor |
| BD137 | Toshiba | Silicon NPN Transistor |
| BD135 | Toshiba | Silicon NPN Transistor |