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BD136 - PNP power transistors

General Description

PNP power transistor in a TO-126; SOT32 plastic package.

NPN complements: BD135, BD137 and BD139.

Key Features

  • High current (max. 1.5 A).
  • Low voltage (max. 80 V).

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Other Datasheets by NXP Semiconductors

Part Number Description
BD131 NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 PINNING PIN 1 2 BD136; BD138; BD140 DESCRIPTION emitter collector, connected to metal part of mounting surface base handbook, halfpage 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol.