NXP Semiconductors BD136
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BD136 |
|---|---|
| Datasheet | BD136 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP power transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 1.5 A)● Low voltage (max. 80 V).
APPLICATIONS
● General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 PINNING PIN 1 2 BD136; BD138; BD140DESCRIPTION
emitter collector, connected to metal part of mounting surface base handbook, halfpage 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD136 BD138 BD140 VCEO collector-emitter voltage BD136 BD138 BD140 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 70 °C open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1.5 −2 −1 8 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −45 −60 −100 V V V MIN.
