BD136 - SILICON PNP Transistor

Toshiba

Key Features

. Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm.

BD136 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BD136
Manufacturer	Toshiba
File Size	104.92 KB
Description	SILICON PNP Transistor
Datasheet	BD136 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
BD135	Silicon NPN Transistor
BD137	Silicon NPN Transistor
BD138	Silicon PNP Transistor
BD139	Silicon NPN Transistor
BD140	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg RATING -45 -60 -80 -45 -60 -80 -5 -0.5 -1.5 6.5 150 -55-150 UNIT 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE TO— 126 TOSHIBA Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.