Datasheet Summary
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
Features
. Designed for plementary Use with BD136, BD138 and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
BD135 BD137 BD139
Collector-Emitter Voltage
BD135 BD137 BD139
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25 C Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO v CEO Vebo I CM
RATING 45 60 80 45 60 80
0.5 1.5
PC L stg
6.5 150
-55-150
UNIT
1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE
TO-...
