BD135 - Silicon NPN Transistor

Toshiba

Key Features

. Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm.

BD135 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BD135
Manufacturer	Toshiba
File Size	101.44 KB
Description	Silicon NPN Transistor
Datasheet	BD135 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
BD136	SILICON PNP Transistor
BD137	Silicon NPN Transistor
BD138	Silicon PNP Transistor
BD139	Silicon NPN Transistor
BD140	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.