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BD137 - Silicon NPN Transistor

Download the BD137 datasheet PDF. This datasheet also covers the BD135 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD135-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD137
Manufacturer Toshiba
File Size 101.44 KB
Description Silicon NPN Transistor
Datasheet download datasheet BD137 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.