DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 60V(Min)
Complement to type BD138
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as audio amplifiers and drivers
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isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB
PC
TJ Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
60
V
60
V
5
V
1.5
A
0.5
A
1.25 W
12.
BD137 Datasheet
