Datasheet Details
| Part number | BD139 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 229.73 KB |
| Description | TO-126 NPN Transistor |
| Datasheet | BD139-Multicomp.pdf |
|
|
Overview: BD139 TO-126 NPN Transistors NPN Epitaxial Silicon Power Transistors TO126 Plastic Package Dimensions A B C D E F G L M N P S 1. Emitter 2. Collector 3. Base Minimum Maximum 7. 2 8.38 10.16 11.43 2.29 3.04 0.64 0.88 2.040 2.285 0.39 0.63 4.07 5.08 15.00 16.63 0.89 1.65 3.31 4.44 2.54 3.30 - 2.54 Dimensions : Millimetres http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 28/06/10 V1.
| Part number | BD139 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 229.73 KB |
| Description | TO-126 NPN Transistor |
| Datasheet | BD139-Multicomp.pdf |
|
|
|
Collector-emitter voltage Collector-emitter voltage (RBE = 1kΩ) Collector-base voltage Emitter base voltage Collector current Collector peak current Base current Power dissipation at Ta = 25°C Derate above 25°C Power dissipation at Tc = 25°C Derate above 25°C Power dissipation at Tc = 70ºC Operating and storage junction Temperature range Symbol VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD139 80 100 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0 -55 to +150 Unit V A W mW/ºC W mW/ºC W °C Thermal Characteristics Junction to ambient in free air Rth (j-a) 100 Junction to case Rth (j-c) 10 ºC/W ºC/W Electrical characteristics (Tc = 25°C unless specified otherwise) Description Symbol Test Condition Minimum Maximum Unit Collector emitter sustaining voltage *VCEO (sus) IC = 30mA, IB = 0 BD139 80 V Collector cut off current Emitter cut off current ICBO IEBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tc = 125ºC VEB = 5V, IC = 0 0.1 µA 10 DC current gain IC = 0.005A, VCE = 2V 25 *hFE IC = 0.15A, VCE = 2V 40 250 - IC = 0.5A, VCE = 2V 25 *Pulse test: -Pulse width=300ms, duty cycle = 2%.
http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 28/06/10 V1.1 BD139 TO-126 NPN Transistors Electrical Characteristics (Tc = 25°C unless specified otherwise) Description Symbol Test Condition Minimum Maximum Unit DC Current Gain *hFE Group IC = 0.15A, VCE = 2V -6 40 - 10 63 - 16 100 - 25 160 Collector emitter saturation vol
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD139 | Complementary low-voltage transistor | STMicroelectronics |
 |
BD139 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
BD139 | Silicon NPN Transistor | Toshiba |
 |
BD139 | NPN POWER TRANSISTORS | UTC |
 |
BD139 | NPN EPITAXIAL SILICON POWER TRANSISTORS | CDIL |
| Part Number | Description |
|---|