BD139 Overview
Description
SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 BD135 BD137 BD139 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tc=125ºC Emitter Cut off Current IEBO VEB=5V, IC=0 DC Current Gain *hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty cycle=2% MIN 45 60 80 25 40 25 BD139 80 100 100 UNIT V V V V A A A W mW/ºC W mW/ºC W ºC ºC/W ºC/W MAX UNIT V V V 0.1 µA 10 µA 10 µA 250 Continental Device India Limited Data Sheet Page 1 of 4 NPN EPITAXIAL SILICON POWER TRANSISTORS ECB DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE Group IC=0.15A, VCE=2V -6 - 10 - 16 - 25 Collector Emitter Saturation Voltage *VCE (sat) IC=0.5A, IB=0.05A Base Emitter On Voltage *VBE(on) *IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty cycle=2% BD135 BD137 BD139 TO126 Plastic Package MIN MAX UNIT 40 100 63 160 100 250 160 400 0.5 V 1.0 V.
