BD139 Datasheet PDF | Continental Device India

Continental Device India BD139

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	BD139
Datasheet	BD139 Download
Manufacturer	Continental Device India
Description	NPN EPITAXIAL SILICON POWER TRANSISTORS
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ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD135 45 45 45 BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 10

ELECTRICAL CHARACTERISTICS

(Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 BD135 BD137 BD139 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tc=125ºC Emitter Cut off Current IEBO VEB=5V, IC=0 DC Current Gain *hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, d...

BD139 Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
BD139	STMicroelectronics
BD139	Fairchild Semiconductor
BD139	Toshiba
BD139	Unisonic Technologies
BD139	onsemi