Datasheet Details
| Part number | BD139 |
|---|---|
| Manufacturer | CDIL |
| File Size | 234.56 KB |
| Description | NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Datasheet | BD139 BD135 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package ECB Designed for use as Audio Amplifier and.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BD139 |
|---|---|
| Manufacturer | CDIL |
| File Size | 234.56 KB |
| Description | NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Datasheet | BD139 BD135 Datasheet (PDF) |
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|
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Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD135 45 45 45 BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 10 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 BD135 BD137 BD139 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tc=125ºC Emitter Cut off Current IEBO VEB=5V, IC=0 DC Current Gain *hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty cycle=2% MIN 45 60 80 25 40 25 BD139 80 100 100 UNIT V V V V A A A W mW/ºC W mW/ºC W ºC ºC/W ºC/W MAX UNIT V V V 0.1 µA 10 µA 10 µA 250 Continental Device India Limited Data Sheet Page 1 of 4 NPN EPITAXIAL SILICON POWER TRANSISTORS ECB ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE Group IC=0.15A, VCE=2V -6 - 10 - 16 - 25 Collector Emitter Saturation Voltage *VCE (sat) IC=0.5A, IB=0.05A Base Emitter On Voltage *VBE(on) *IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty cycle=2% BD135 BD137 BD139 TO126 Plastic Package MIN MAX UNIT 40 100 63 160 100 250 160 400 0.5 V 1.0 V Continental Device I
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD139 | Complementary low-voltage transistor | STMicroelectronics |
 |
BD139 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
BD139 | Silicon NPN Transistor | Toshiba |
 |
BD139 | TO-126 NPN Transistor | Multicomp |
 |
BD139 | NPN POWER TRANSISTORS | UTC |
| Part Number | Description |
|---|---|
| BD165 | NPN PLASTIC POWER TRANSISTORS |
| BD166 | PNP PLASTIC POWER TRANSISTORS |
| BD167 | NPN PLASTIC POWER TRANSISTORS |
| BD168 | PNP PLASTIC POWER TRANSISTORS |
| BD169 | NPN PLASTIC POWER TRANSISTORS |
| BD170 | PNP PLASTIC POWER TRANSISTORS |
| BD175 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD176 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD177 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD178 | EPITAXIAL SILICON POWER TRANSISTORS |