Datasheet Details
| Part number | BD131 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.77 KB |
| Description | NPN Transistor |
| Datasheet | BD131-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131.
| Part number | BD131 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.77 KB |
| Description | NPN Transistor |
| Datasheet | BD131-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 70 V 45 V 6 V 3 A 6 A 0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD131 | NPN power transistor | NXP |
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BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| BD132 | PNP Transistor |
| BD135 | NPN Transistor |
| BD136 | PNP Transistor |
| BD137 | NPN Transistor |
| BD138 | PNP Transistor |
| BD139 | NPN Transistor |
| BD112 | NPN Transistor |
| BD116 | NPN Transistor |
| BD117 | NPN Transistor |
| BD140 | PNP Transistor |