BD131
Overview
DC Current Gain- : hFE= 40(Min)@ IC= 0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) Complement to type BD132 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD131 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 203.77 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD131 | Comset Semiconductors | SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| BD138 | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor |
| BD137 | Toshiba | Silicon NPN Transistor |
| BD136 | Unisonic Technologies | PNP SILICON TRANSISTOR |
| BD132 | Comset Semiconductors | SILICON PLANAR EPITAXIAL POWER TRANSISTORS |