BD131 datasheet by Inchange Semiconductor.
| Part number | BD131 |
|---|---|
| Datasheet | BD131-INCHANGE.pdf |
| File Size | 203.77 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·plement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 TC=25℃ unless otherwise specified SYMBOL PARAMETER...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD131 | NPN power transistor | NXP |
 |
BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS | Comset Semiconductors |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD132 | PNP Transistor |
| BD135 | NPN Transistor |
| BD136 | PNP Transistor |
| BD137 | NPN Transistor |
| BD138 | PNP Transistor |
| BD139 | NPN Transistor |
| BD112 | NPN Transistor |
| BD116 | NPN Transistor |
| BD117 | NPN Transistor |
| BD140 | PNP Transistor |
