BD131 Description
hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·plement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 TC=25℃ unless otherwise specified SYMBOL PARAMETER...