Datasheet Details
| Part number | BD134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD134-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BD134 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD134-InchangeSemiconductor.pdf |
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·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifiers and drivers utilizing plementary or quasi plementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 13 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BD134 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD134 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Part Number | Description |
|---|---|
| BD107 | Silicon NPN Power Transistor |
| BD189 | Silicon NPN Power Transistor |