DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 45V(Min)
Complement to type BD136
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for use as audio amplifiers and drivers
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isc Silicon NPN Power Transistor
BD135
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 45V(Min) ·Complement to type BD136 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
1.25 W
12.
BD135 Datasheet
