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BD131 Datasheet

The BD131 is a NPN power transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBD131
ManufacturerNXP Semiconductors
Overview handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD.
* High current (max. 3 A)
* Low voltage (max. 45 V). APPLICATIONS
* General purpose power applications. DESCRIPTION handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PN.
Part NumberBD131
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and relia. 131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(.
Part NumberBD131
DescriptionSILICON PLANAR EPITAXIAL POWER TRANSISTORS
ManufacturerComset Semiconductors
Overview NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD132 Compliance to RoHS. ABS. C=0, VEB=3 V Collector-Emitter saturation IC=0.5 A, IB=50 mA Voltage IC=2.0 A, IB=200 mA IC=0.5 A, IB=50 mA Base-Emitter saturation Voltage IC=2.0 A, IB=200 mA VCE=12 V, IC=500m A DC Current Gain VCE=1 V, IC=2 A COMSET SEMICONDUCTORS 18/10/2012 1|2 Datasheet pdf - http://www.DataSheet4U.co.kr/ N.