NXP Semiconductors BD131
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BD131 |
|---|---|
| Datasheet | BD131 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 3 A)● Low voltage (max. 45 V).
APPLICATIONS
● General purpose power applications.DESCRIPTION
handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface baseDESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 70 45 6 3 6 0.5 15 +150 150 +150 V V V A A A W °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1.
