The BD137 is a NPN SILICON TRANSISTOR. Download the datasheet PDF and view key features and specifications below.
| Part Number | BD137 |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM. =30V, TC=125°C 10 IEBO VEB=5.0V 100 BVCEO IC=30mA (BD135) 45 BVCEO IC=30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 250 . |
| Part Number | BD137 |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor
August 2013
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
• Mediu.
* Complement to BD136, BD138 and BD140 respectively Applications * Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Ma. |
| Part Number | BD137 |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | onsemi |
| Overview |
BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
• Medium Power Linea.
* Complement to BD136, BD138 and BD140 respectively Applications * Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Ma. |
| Part Number | BD137 |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Toshiba |
| Overview | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM. . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25. |
| Part Number | Manufacturer | Description |
|---|---|---|
| BD137G | onsemi | Plastic Medium-Power Silicon NPN Transistors |
| BD137-10 | onsemi | NPN Epitaxial Silicon Transistor |
| BD13716S | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
| BD13716STU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
| BD13710STU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
| BD137-16 | onsemi | NPN Epitaxial Silicon Transistor |
| BD137-16 | onsemi | NPN Epitaxial Silicon Transistor |
