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BD131 Datasheet Preview

BD131 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A
·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 45V(Min.)
·Complement to type BD132
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for medium power and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak
Collector Power Dissipation
@ TC=25
Junction Temperature
70
V
45
V
6
V
3
A
6
A
0.5
A
15
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD131 Datasheet Preview

BD131 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB= 0.2A
VCB= 40V; IE= 0
VCB= 40V; IE= 0,TC=150
VEB= 3V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 12V
hFE-2
DC Current Gain
IC= 2A; VCE= 1V
fT
Current-Gain—Bandwidth Product IC= 0.25A; VCE= 5V
MIN TYP. MAX UNIT
45
V
0.3
V
0.7
V
1.2
V
1.5
V
50
nA
10 μA
50 nA
40
20
60
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD131
Description NPN Transistor
Maker INCHANGE
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