Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A
- Collector-Emitter Breakdown Voltage
- : V(BR)CEO= 45V(Min.)
- plement to type BD132
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for medium power and general purpose...
