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BD131 - NPN Transistor

Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) Complement to type BD132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power and general purpose appli

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 70 V 45 V 6 V 3 A 6 A 0.
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