Datasheet Details
| Part number | BD176 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.13 KB |
| Description | PNP Transistor |
| Download | BD176 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor BD176.
| Part number | BD176 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.13 KB |
| Description | PNP Transistor |
| Download | BD176 Download (PDF) |
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·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Complement to type BD175 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD176 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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BD176 | EPITAXIAL SILICON POWER TRANSISTORS | CDIL |
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BD176 | (BD176 - BD180) SILICON POWER TRANSISTOR | SavantIC |
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BD176 | EPITAXIAL SILICON POWER TRANSISTORS | TRANSYS |
| Part Number | Description |
|---|---|
| BD175 | NPN Transistor |
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