Datasheet4U Logo Datasheet4U.com

BD176 Datasheet

The BD176 is a PNP Epitaxial Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBD176
ManufacturerFairchild Semiconductor
Overview BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Abso. On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE.
Part NumberBD176
Description(BD176 - BD180) SILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview With TO-126 package ·Complement to type BD175 /177 /179 APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base. aining voltage BD178 BD180 BD176 ICBO Collector cut-off current BD178 BD180 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-250mA; VCE=-10V IC=-0.1A; I.
Part NumberBD176
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Complement to type BD175 ·Minimum Lot-to-Lot variations for robust device performance a. tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V ICBO Collector Cu.
Part NumberBD176
DescriptionEPITAXIAL SILICON POWER TRANSISTORS
ManufacturerTRANSYS
Overview Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and. .

Similar Datasheets

Part Number Manufacturer Description
BD178 SavantIC SILICON POWER TRANSISTOR
BD180 SavantIC SILICON POWER TRANSISTOR
BD176 Continental Device India EPITAXIAL SILICON POWER TRANSISTORS