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BD176 - PNP Transistor

General Description

DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) Complement to type BD175 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switch

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isc Silicon PNP Power Transistor BD176 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Complement to type BD175 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.