BD179 - NPN Transistor

Inchange Semiconductor

General Description

DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) Complement to type BD180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switchin

📥 Download Datasheet

BD179 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD179
Manufacturer	Inchange Semiconductor
File Size	207.52 KB
Description	NPN Transistor
Datasheet	BD179 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BD179	Plastic Medium Power Silicon NPN Transistor	Motorola Inc
BD179	Plastic Medium-Power NPN Silicon Transistor	ON Semiconductor
BD179	NPN power transistor	STMicroelectronics
BD179	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
BD179	EPITAXIAL SILICON POWER TRANSISTORS	CDIL

Other Datasheets by Inchange Semiconductor

Part Number	Description
BD175	NPN Transistor
BD176	PNP Transistor
BD177	NPN Transistor
BD178	PNP Transistor
BD112	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor BD179 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) ·Complement to type BD180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.