BD179 - Plastic Medium-Power NPN Silicon Transistor

onsemi

Key Features

ăDC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc.
ăBD179 is complementary with BD180.
ăPb-Free Package is Available.

BD179 plastic medium-power npn silicon transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	BD179
Manufacturer	onsemi
File Size	76.84 KB
Description	Plastic Medium-Power NPN Silicon Transistor
Datasheet	BD179 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features •ăDC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc •ăBD179 is complementary with BD180 •ăPb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VEBO IC IB PD 80 Vdc 80 Vdc 5.0 Vdc 3.0 Adc 1.0 Adc 30 W 240 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –ā65 to +ā150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 4.