BD175 - EPITAXIAL SILICON POWER TRANSISTORS

TRANSYS

General Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45

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BD175 epitaxial silicon power transistors by TRANSYS - Datasheet Preview

Datasheet Details

Part number	BD175
Manufacturer	TRANSYS
File Size	61.26 KB
Description	EPITAXIAL SILICON POWER TRANSISTORS
Datasheet	BD175 Datasheet

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Other Datasheets by TRANSYS

Part Number	Description
BD176	EPITAXIAL SILICON POWER TRANSISTORS
BD177	EPITAXIAL SILICON POWER TRANSISTORS
BD178	EPITAXIAL SILICON POWER TRANSISTORS
BD179	EPITAXIAL SILICON POWER TRANSISTORS
BD115	NPN Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transys Electronics LIMITED EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN BD176 BD178 BD180 PNP ECB Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 BD177 BD178 60 60 5.0 3.0 7.0 1.