Download BD249C Datasheet PDF
Inchange Semiconductor
BD249C
BD249C is NPN Transistor manufactured by Inchange Semiconductor.
- Part of the BD249 comparator family.
DESCRIPTION - Collector Current -IC= 25A - plement to Type BD250/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD249 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 BD249 VCEO Collector-Emitter Voltage BD249A BD249B VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature 3 W ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0...