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BD331 - NPN Transistor

Description

High DC Current Gain Complement to type BD332 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuit for audio output stages and general amplifier and switching applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD331 DESCRIPTION ·High DC Current Gain ·Complement to type BD332 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 60 V 60 V 6 V 6 A 0.
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