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BD442 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD441 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCES Collector-Emitter Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;

Overview

isc Silicon PNP Power Transistor BD442.