BD442 Datasheet and Specifications PDF

The BD442 is a PNP Transistor.

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Part NumberBD442 Datasheet
Manufactureronsemi
Overview BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complement.
* Pb
*Free Packages are Available* 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit Collector
*Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc Collector
*Base Voltage BD436 BD438 BD440 BD442 .
Part NumberBD442 Datasheet
DescriptionPNP power transistor
ManufacturerSTMicroelectronics
Overview This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The NPN type is .
* PNP transistor Applications
* Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The NPN type is BD441. 1 2 3 .
Part NumberBD442 Datasheet
DescriptionPlastic Medium Power Silicon PNP Transistor
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD438/D Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD. ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ CASE 77
*08 TO
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Part NumberBD442 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD441 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for . Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff Current VCB= -80V; IE= 0 ICEO Collector Cutoff Current VCE= -80V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 .