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BD539D Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 A 2 W 45 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD539D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;

Overview

isc Silicon NPN Power Transistor BD539D.