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BD539D - NPN Transistor

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Datasheet Details

Part number BD539D
Manufacturer INCHANGE
File Size 187.05 KB
Description NPN Transistor
Datasheet download datasheet BD539D-INCHANGE.pdf

BD539D Product details

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type BD540D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V

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