The BD539D is a NPN SILICON POWER TRANSISTORS.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BD539D Datasheet |
|---|---|
| Manufacturer | Power Innovations Limited |
| Overview | BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Ser. pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 . |
| Part Number | BD539D Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-to-Lot variations for robust device performance and re. er Transistor BD539D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
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| Part Number | Manufacturer | Description |
|---|---|---|
| BD539 | Power Innovations Limited | NPN SILICON POWER TRANSISTORS |
| BD539 | Inchange Semiconductor | NPN Transistor |
| BD539A | Power Innovations Limited | NPN SILICON POWER TRANSISTORS |
| BD539B | Power Innovations Limited | NPN SILICON POWER TRANSISTORS |
| BD539C | Inchange Semiconductor | NPN Transistor |
| BD539C | Power Innovations Limited | NPN SILICON POWER TRANSISTORS |
| BD539B | Inchange Semiconductor | NPN Transistor |