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BD539C

Manufacturer: Inchange Semiconductor

BD539C datasheet by Inchange Semiconductor.

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BD539C Datasheet Details

Part number BD539C
Datasheet BD539C-INCHANGE.pdf
File Size 186.69 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
BD539C page 2

BD539C Overview

hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·plement to Type BD540C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD539C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...

BD539C from other manufacturers

View BD539C datasheet index

Brand Logo Part Number Description Other Manufacturers
Power Innovations Limited Logo BD539C NPN SILICON POWER TRANSISTORS Power Innovations Limited
Power Innovations Limited Logo BD539 NPN SILICON POWER TRANSISTORS Power Innovations Limited
Power Innovations Limited Logo BD539A NPN SILICON POWER TRANSISTORS Power Innovations Limited
Power Innovations Limited Logo BD539B NPN SILICON POWER TRANSISTORS Power Innovations Limited
Power Innovations Limited Logo BD539D NPN SILICON POWER TRANSISTORS Power Innovations Limited
Inchange Semiconductor logo - Manufacturer

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