BD535 Overview
hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·plement to Type BD536 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD535 TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS...



