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BD539 - NPN Transistor

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Part number BD539
Manufacturer INCHANGE
File Size 186.03 KB
Description NPN Transistor
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Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Complement to Type BD540 APPLICATIONS Designed for use in medium power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power

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