BD539 datasheet by Inchange Semiconductor.
| Part number | BD539 |
|---|---|
| Datasheet | BD539-INCHANGE.pdf |
| File Size | 186.03 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·plement to Type BD540 APPLICATIONS ·Designed for use in medium power linear and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD539 | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
|
BD539A | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
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BD539B | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
|
BD539C | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
|
BD539D | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD539A | NPN Transistor |
| BD539B | NPN Transistor |
| BD539C | NPN Transistor |
| BD539D | NPN Transistor |
| BD533 | NPN Transistor |
| BD534 | PNP Transistor |
| BD535 | NPN Transistor |
| BD536 | PNP Transistor |
| BD537 | NPN Transistor |
| BD538 | PNP Transistor |
