BD539D Description
These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
BD539D is NPN SILICON POWER TRANSISTORS manufactured by Power Innovations Limited.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
BD539D | NPN Transistor |
Inchange Semiconductor |
BD539 | NPN Transistor |
Inchange Semiconductor |
BD539A | NPN Transistor |
Inchange Semiconductor |
BD539B | NPN Transistor |
Inchange Semiconductor |
BD539C | NPN Transistor |
These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.