BD539C Overview
These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
BD539C datasheet by Power Innovations Limited.
| Part number | BD539C |
|---|---|
| Datasheet | BD539C_PowerInnovationsLimited.pdf |
| File Size | 85.53 KB |
| Manufacturer | Power Innovations Limited |
| Description | NPN SILICON POWER TRANSISTORS |
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These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BD539C | NPN Transistor | INCHANGE |
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BD539 | NPN Transistor | INCHANGE |
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BD539A | NPN Transistor | INCHANGE |
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BD539B | NPN Transistor | INCHANGE |
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BD539D | NPN Transistor | INCHANGE |
View all Power Innovations Limited datasheets
| Part Number | Description |
|---|---|
| BD539 | NPN SILICON POWER TRANSISTORS |
| BD539A | NPN SILICON POWER TRANSISTORS |
| BD539B | NPN SILICON POWER TRANSISTORS |
| BD539D | NPN SILICON POWER TRANSISTORS |
| BD540 | PNP SILICON POWER TRANSISTORS |
| BD540A | PNP SILICON POWER TRANSISTORS |
| BD540B | PNP SILICON POWER TRANSISTORS |
| BD540C | PNP SILICON POWER TRANSISTORS |
| BD543 | NPN SILICON POWER TRANSISTORS |
| BD543A | NPN SILICON POWER TRANSISTORS |