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BD649 Datasheet - INCHANGE

NPN Transistor

BD649 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Low Saturation Voltage *Complement to Type BD650 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use as c.

BD649 Datasheet (190.40 KB)

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Datasheet Details

Part number:

BD649

Manufacturer:

INCHANGE

File Size:

190.40 KB

Description:

Npn transistor.

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BD649 NPN Transistor INCHANGE

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