| Part Number | BD649 Datasheet |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended. 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in . |
BD649 Datasheet and Specifications PDF
The BD649 is a SILICON DARLINGTON POWER TRANSISTORS.
Key Specifications
| Part Number | BD649 Datasheet |
|---|---|
| Description | NPN SILICON POWER DARLINGTONS |
| Manufacturer | Bourns |
| Overview | BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous. EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. De. |
| Part Number | BD649 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applicat. BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO Collector cut-off current BD649 BD651 BD645 BD647 . |
| Part Number | BD649 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD650 ·Minimum Lot-to-Lot variations for robust de. t 62.5 ℃/W BD649 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE. |