| Part number | BD649F |
|---|---|
| Download | BD649F Datasheet (PDF) |
| File Size | 209.86 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Bourns |
BD649 | NPN SILICON POWER DARLINGTONS |
SavantIC |
BD649 | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BD649 | SILICON DARLINGTON POWER TRANSISTORS |
ROHM |
BD64950EFJ | 40V Withstand Voltage 3.5A DC Brush Motor Driver |
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;.
