Part BD646
Description PNP Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 189.54 KB
Inchange Semiconductor

BD646 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) - High DC Current Gain : hFE= 750(Min) @IC= -3A - Low Saturation Voltage - Complement to Type BD645 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.