Part BD644
Description Silicon PNP Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 193.69 KB
Inchange Semiconductor

BD644 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) - High DC Current Gain : hFE= 750(Min) @IC= -3A - Low Saturation Voltage - Complement to Type BD643 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.