| Part number | BD648 |
|---|---|
| Datasheet | BD648-INCHANGE.pdf |
| File Size | 189.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD648 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD648 | PNP SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD648 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD648 | Power Transistor | Comset Semiconductors |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD648F | PNP Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD645 | NPN Transistor |
| BD645F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |
| BD649 | NPN Transistor |
