Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= -3A
Low Saturation Voltage
Complement to Type BD647
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as
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isc Silicon PNP Darlington Power Transistor
BD648
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.
BD648 Datasheet
