BD648F Description
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD648F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;.