| Part Number | BD646 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD645 ·Minimum Lot-to-Lot variations for robust d. on to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD646 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Volt. |
BD646 Datasheet and Specifications PDF
The BD646 is a PNP Transistor.
Key Specifications
| Package | TO-220 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Part Number | BD646 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applicat. d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD646 BD648 ICBO Collector cut-off current BD650 BD652. |
| Part Number | BD646 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intende. BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting v. |
| Part Number | BD646 Datasheet |
|---|---|
| Description | PNP SILICON POWER DARLINGTONS |
| Manufacturer | Bourns |
| Overview | BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous. EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of . |