NPN Transistor
| Part number | BD649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.40 KB |
| Description | NPN Transistor |
| Datasheet | BD649-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD649 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD649 | NPN SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD649 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD649 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
 |
BD64950EFJ | 40V Withstand Voltage 3.5A DC Brush Motor Driver | ROHM |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD649F | NPN Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD645 | NPN Transistor |
| BD645F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |
| BD648 | PNP Transistor |
