| Part number | BD645 |
|---|---|
| Datasheet | BD645 Datasheet PDF (Download) |
| File Size | 188.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD645 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD645 | NPN SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD645 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD645 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
