| Part number | BD645 |
|---|---|
| Datasheet | BD645-INCHANGE.pdf |
| File Size | 188.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD645 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD645 | NPN SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD645 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD645 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
 |
BD64550EFV | System Driver | Rohm |
 |
BD645CS | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | Pan Jit International |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD645F | NPN Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |
| BD648 | PNP Transistor |
| BD648F | PNP Transistor |
| BD649 | NPN Transistor |
