Part BD645
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 188.75 KB
Inchange Semiconductor

BD645 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - High DC Current Gain : hFE= 750(Min) @IC= 3A - Low Saturation Voltage - Complement to Type BD646 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.