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BD650 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 62.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W BD650 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD650 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA;

IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;

Overview

isc Silicon PNP Darlington Power Transistor.