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BD652 Datasheet - INCHANGE

PNP Transistor

BD652 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *High DC Current Gain : hFE= 750(Min) @IC= -3A *Low Saturation Voltage *Complement to Type BD651 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use as.

BD652 Datasheet (190.60 KB)

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Datasheet Details

Part number:

BD652

Manufacturer:

INCHANGE

File Size:

190.60 KB

Description:

Pnp transistor.

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BD652 PNP Transistor INCHANGE

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