The BD652 is a PNP Transistor.
| Package | SOP |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Operating Voltage | 5 V |
| Max Voltage (typical range) | 5.5 V |
| Min Voltage (typical range) | 3 V |
| Height | 1.5 mm |
| Length | 5 mm |
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 ·Minimum Lot-to-Lot variations for robust .
unction to Ambient isc website: 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD652 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Vo.
SavantIC
·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applicat.
d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD646 BD648 ICBO Collector cut-off current BD650 BD652.
Comset Semiconductors
SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intende.
BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting v.
Bourns
BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous.
EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of .
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| Part Number | Manufacturer | Description |
|---|---|---|
| BD6522F | ROHM | 2.0A Current Load Switch |
| BD6529GUL | ROHM | 0.5A Current Load Switch |
| BD6524HFV | ROHM | 0.5A Current Load Switch |
| BD652F | Inchange Semiconductor | PNP Transistor |
| BD6528HFV | ROHM | 0.5A Current Load Switch |
| BD6520F | ROHM | 2.0A Current Load Switch |
| BD652 | TRSYS | PNP SILICON POWER DARLINGTONS |