BD652 Datasheet and Specifications PDF

The BD652 is a PNP Transistor.

Key Specifications Powered by Octopart

PackageSOP
Mount TypeSurface Mount
Pins8
Operating Voltage5 V
Max Voltage (typical range)5.5 V
Min Voltage (typical range)3 V
Height1.5 mm
Length5 mm

BD652 Datasheet

BD652 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BD652 Datasheet Preview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 ·Minimum Lot-to-Lot variations for robust .

unction to Ambient isc website: 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD652 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Vo.

BD652 Datasheet (SavantIC)

SavantIC

BD652 Datasheet Preview

·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applicat.

d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD646 BD648 ICBO Collector cut-off current BD650 BD652.

BD652 Datasheet (Comset Semiconductors)

Comset Semiconductors

BD652 Datasheet Preview

SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intende.

BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting v.

BD652 Datasheet (Bourns)

Bourns

BD652 Datasheet Preview

BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous.

EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of .

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