BD652F
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain
- Low Saturation Voltage
- plement to Type BD651F
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for use as plementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-8
Collector Current-Peak
-12
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
Junction Temperature
-0.15
20...
