Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
High DC Current Gain
Low Saturation Voltage
Complement to Type BD651F
Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS
Designed for use as complementary AF push-pu
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
BD652F
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD651F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
BD652F Datasheet
