Datasheet Summary
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain
- Low Saturation Voltage
- plement to Type BD649F
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for use as plementary AF push-pull output stage applications...
