| Part number | BD650F |
|---|---|
| Datasheet | BD650F-INCHANGE.pdf |
| File Size | 210.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD650 | PNP SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD650 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD650 | Power Transistor | Comset Semiconductors |
 |
BD650CS | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | Pan Jit International |
|
BD650CT | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | Pan Jit International |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD650 | PNP Transistor |
| BD651 | NPN Transistor |
| BD651F | NPN Transistor |
| BD652 | PNP Transistor |
| BD652F | PNP Transistor |
| BD609 | NPN Transistor |
| BD633 | Silicon NPN Power Transistor |
| BD636 | Silicon PNP Power Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
