| Part number | BD650F |
|---|---|
| Download | BD650F Datasheet (PDF) |
| File Size | 210.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Bourns |
BD650 | PNP SILICON POWER DARLINGTONS |
SavantIC |
BD650 | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BD650 | Power Transistor |
PanJit Semiconductor |
BD650CS | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
PanJit Semiconductor |
BD650CT | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;.
