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Inchange Semiconductor
BD650
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) - High DC Current Gain : h FE= 750(Min) @IC= -3A - Low Saturation Voltage - plement to Type BD649 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as plementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -8 Collector Current-Peak -12 Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power...